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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB645 DESCRIPTION With TO-3 package High power dissipation APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Open base CONDITIONS Open emitter Collector-base voltage HAN INC Collector-emitter voltage Emitter-base voltage Collector current Base current SEM GE OND IC TOR UC VALUE -200 -200 -5 -15 -5 UNIT V V V A A W ae ae Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 150 150 -65~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB645 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -200 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=-1mA ;IC=0 IC=-10A; IB=-1A -5 V Collector-emitter saturation voltage -3.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-1A ; VCE=-5V 40 140 fT Transition frequency hFE Classifications R 40-80 O 70-140 IC=-0.5A ; VCE=-10V HAN INC SEM GE OND IC TOR UC 12 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB645 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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